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| SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS ISSUE 3 - JANUARY 1996 FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteristics specified up to 1 Amp COMPLEMENTARY TYPES PARTMARKING DETAILS PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range FZT957 - FZT857 FZT958 - N/A DEVICE TYPE IN FULL SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg -2 -1 3 -55 to +150 FZT957 -300 -300 -6 FZT957 FZT958 C E C B ABSOLUTE MAXIMUM RATINGS. FZT958 -400 -400 UNIT V V V -1.5 -0.5 A A W C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum 3 - 289 FZT957 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R 1k IEBO VCE(sat) -60 -110 -170 -910 -750 100 100 90 200 200 170 10 85 23 108 2500 MIN. -330 -330 -300 -6 TYP. -440 -440 -400 -8 -50 -1 -50 -1 -10 -100 -165 -240 -1150 -1020 MAX. UNIT V V V V nA nA nA mV mV mV mV mV CONDITIONS. IC=-100A IC=-1A, RB 1k IC=-10mA* IE=-100A VCB=-300V VCB=-300V, Tamb=100C VCB=-300V VCB=-300V, Tamb=100C VEB=-6V IC=-100mA, IB=-10mA* IC=-500mA, IB=-100mA* IC=-1A, IB=-300mA* IC=-1A, IB=-300mA* IC=-1A, VCE=-10V* IC=-10mA, VCE=-10V* IC=-0.5A, VCE=-10V* IC=-1A, VCE=-10V* IC=-2A, VCE=-10V* MHz pF ns ns IC=-100mA, VCE=-10V f=50MHz VCB=-20V, f=1MHz IC=-500mA, IB1=-50mA IB2=50mA, VCC=-100V A A VBE(sat) VBE(on) hFE 300 Transition Frequency Output Capacitance Switching Times fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 290 FZT957 TYPICAL CHARACTERISTICS IC/IB=5 IC/IB=20 Tamb=25C -55C +25C +175C IC/IB=5 1.6 1.6 - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 I+ - Collector Current (Amps) 10 20 - (Volts) V 1.4 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 V 0.01 0.1 1 I+ - Collector Current (Amps) 10 20 VCE(sat) v IC VCE(sat) v IC 1.6 - Typical Gain - Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 +100C +25C -55C VCE=10V 300 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 -55C +25C +100C +175C IC/IB=10 200 h h 0.01 0.1 1 10 20 V 100 - (Volts) I+ - Collector Current (Amps) 0.01 0.1 1 I+ - Collector Current (Amps) 10 20 hFE v IC VBE(sat) v IC Single Pulse Test Tamb=25C 1.6 - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 -55C +25C +100C +175C VCE=10V 10 1 DC 1s 100ms 10ms 1ms 100s 0.1 V 0.01 0.1 1 10 20 0.01 1 10 100 1000 I+ - Collector Current (Amps) VCE - Collector Voltage (V) VBE(on) v IC Safe Operating Area 3 - 291 FZT958 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R 1k IEBO VCE(sat) -100 -150 -340 -830 -725 100 100 10 200 200 20 85 19 104 2400 MIN. -400 -400 -400 -6 TYP. -600 -600 -550 -8 -50 -1 -50 -1 -10 -150 -200 -400 -950 -840 MAX. UNIT V V V V nA nA nA mV mV mV mV mV CONDITIONS. IC=-100A IC=-1A, RB 1k IC=-10mA* IE=-100A VCB=-300V VCB=-300V, Tamb=100C VCB=-300V VCB=-300V, Tamb=100C VEB=-6V IC=-10mA, IB=-1mA* IC=-100mA, IB=-10mA* IC=-500mA, IB=-100mA* IC=-500mA, IB=-100mA* IC=-500mA, VCE=-10V* IC=-10mA, VCE=-10V* IC=-500mA, VCE=-10V* IC=-1A, VCE=-10V* MHz pF ns ns IC=-100mA, VCE=-10V f=50MHz VCB=-20V, f=1MHz IC=-500mA, IB1=-50mA IB2=50mA, VCC=-100V A A VBE(sat) VBE(on) hFE 300 fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 292 FZT958 TYPICAL CHARACTERISTICS IC/IB=5 IC/IB=20 Tamb=25C -55C +25C +175C 1.6 1.6 IC/IB=5 - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 I+ - Collector Current (Amps) 10 20 - (Volts) V 1.4 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 V 0.01 0.1 1 I+ - Collector Current (Amps) 10 20 VCE(sat) v IC VCE(sat) v IC 1.6 - Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 +100C +25C -55C VCE=10V 300 1.6 - Typical Gain - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 -55C +25C +100C +175C IC/IB=10 200 h 0.01 0.1 1 10 20 h V 100 I+ - Collector Current (Amps) 0.01 0.1 1 I+ - Collector Current (Amps) 10 20 hFE v IC VBE(sat) v IC Single Pulse Test Tamb=25C 1.6 - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 -55C +25C +100C +175C VCE=10V 10 1 DC 1s 100ms 10ms 1ms 100s 0.1 V 0.01 0.1 1 10 20 0.01 1 10 100 1000 I+ - Collector Current (Amps) VCE - Collector Voltage (V) VBE(on) v IC Safe Operating Area 3 - 293 |
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